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Catalyst-free Growth of Large Scale Ga2O3 Nanowires

Published online by Cambridge University Press:  15 March 2011

Ko-wei Chang ,
Sai-chang Liu ,
Liang-Yih Chen ,
Franklin Chau-Nan Hong  and
Jih-Jen Wu
Ko-wei Chang
Affiliation:
Department of Chemical Engineering, National Cheng Kung University Tainan, Taiwan
Sai-chang Liu
Affiliation:
Department of Chemical Engineering, National Cheng Kung University Tainan, Taiwan
Liang-Yih Chen
Affiliation:
Department of Chemical Engineering, National Cheng Kung University Tainan, Taiwan
Franklin Chau-Nan Hong
Affiliation:
Department of Chemical Engineering, National Cheng Kung University Tainan, Taiwan
Jih-Jen Wu
Affiliation:
Department of Chemical Engineering, National Cheng Kung University Tainan, Taiwan
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Abstract

Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2 / H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 703: Symposia U/V – Nanophase and Nanocomposite Materials IV , 2001 , V3.15
Copyright
Copyright © Materials Research Society 2002

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References

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