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Catalyst-Free GaN Nanowire Nucleation: Correlation of Temperature-Dependent Nanowire Orientation and Growth Matrix Changes

Published online by Cambridge University Press:  31 January 2011

Kaylee McElroy ,
Virginia M Ayres ,
Thomas R. Bieler ,
Benjamin W Jacobs  and
Martin A Crimp
Kaylee McElroy
Affiliation:
[email protected]
Virginia M Ayres
Affiliation:
[email protected], Michigan State University, East Lansing, Michigan, United States
Thomas R. Bieler
Affiliation:
[email protected]
Benjamin W Jacobs
Affiliation:
[email protected], Sandia National Laboratories, Livermore, California, United States
Martin A Crimp
Affiliation:
[email protected], United States
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Abstract

Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

Keywords

nitridenucleation & growthvapor pressure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1206: Symposium M – Multifunction at the Nanoscale through Nanowires , 2009 , 1206-M11-42
Copyright
Copyright © Materials Research Society 2010

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