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Carrier Transport and Lateral Conductivity in Nanocrystalline Silicon Layers

Published online by Cambridge University Press:  17 March 2011

H. B. Kim ,
L. Montes ,
R. Krishnan ,
P. M. Fauchet  and
L. Tsybeskov
H. B. Kim
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
L. Montes
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
R. Krishnan
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
P. M. Fauchet
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
L. Tsybeskov
Affiliation:
Nanoscale Silicon Research Initiative, Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627, U.S.A
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Abstract

We have studied carrier transport and lateral electrical properties of nanocrystalline Si layers containing size controlled Si nanocrystals. Using results from direct current (dc) and alternating current (ac) conductivity measurements, the charging of Si nanocrystals and Coulomb blockade effect are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.12.1
Copyright
Copyright © Materials Research Society 2001

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