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Carrier Separation Effects in Doping Modulated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

J. Kakalios ,
C. C. Tsai  and
R. A. Street
J. Kakalios
Affiliation:
Xerox Palo Alto Research Center, Palo Alto CA 94304
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto CA 94304
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Abstract

Doping modulated amorphous silicon films have been synthesized which exhibit photoconductivity decay times in excess of 1000 seconds at 78 K. The time and intensity dependence of the photoconductivity is described by a model in which photo-excited charge carriers are spatially separated to separate layers by the built-in pn junction fields and reside in band tail states.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 435
Copyright
Copyright © Materials Research Society 1986

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References

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