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Carrier Removal in n+ GaAs:Si by Proton Implantation. a Spectroscopic Study

Published online by Cambridge University Press:  26 February 2011

B. Pajot ,
J. Chevallier ,
A. Chaumont  and
R. Azoulay
B. Pajot
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
J. Chevallier
Affiliation:
Laboratoire de Physique des Solides, C.N.R.S., 1 place A. Briand, 92190 Bellevue, France
A. Chaumont
Affiliation:
C.S.N.S.M., Bât. 104-106, 91405 Campus d'Orsay, France
R. Azoulay
Affiliation:
C.N.E.T., 196 rue de Paris, 92220 Bagneux, France
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Abstract

Protons and deuterons have been implanted in n+ GaAs:Si epilayers. Localized vibrational modes (LVM's) associated to H- and D-related defects are observed in the as-implanted samples and they account presumably for the carrier removal in the compensated region, but a small concentration of Si-H passivating centers is already present. LVM spectroscopy shows that after a 200° C annealing, passivation predominates over compensation while a 400° C annealing extends partial passivation throughout the layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 345
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Zavada, J.M., Jenkinson, H.A., Sarkis, R.G. and Wilson, R.G., J. Appl. Phys. 58, 3731 (1985).Google Scholar
2.Chevallier, J., Dautremont-Smith, W.C., Tu, C.W. and Pearton, S.J., Appl. Phys. Lett. 47, 108 (1985).Google Scholar
3.Jalil, A., Chevallier, J., Azoulay, R. and Mircea, A., J. Appl. Phys. 59, 3774 (1985).Google Scholar
4.Pajot, B., Newman, R.C., Murray, R., Jalil, A., Chevallier, J. and Azoulay, R., Phys. Rev. B (to be published).Google Scholar
5.Theis, W.M. and Spitzer, W.G., J. Appl. Phys. 56, 890 (1984).Google Scholar
6.Newman, R.C. and Woodhead, J., Radiation Effects 53, 41 (1980).Google Scholar
7.Tatarkiewicz, J., Krol, A., Breitschwerdt, A. and Cardona, M., Phys. Stat.Sol. (b) 140, 369 (1987).Google Scholar
8.Liou, L.L., Spitzer, W.G., Zavada, J.M. and Jenkinson, H.A., J. Appl. Phys. 59, 1936 (1986).Google Scholar
9.Pearton, S.J., Dautremont-Smith, W.C., Chevallier, J., Tu, C.W. and Cummings, K.D., J. Appl. Phys. 59, 2821 (1986).Google Scholar
10.Ascheron, C., Bauer, C., Sobotta, H. and Riede, V., Phys. Stat. Sol. ( ) 89, 559 (1985).Google Scholar