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Carrier Profile Variation of a Channel Conductive Layer Through Phospho-Silicate-Glass Cap Annealing of N+ Si-Implanted GaAs Crystals

Published online by Cambridge University Press:  03 September 2012

Yasuyuki Saito
Yasuyuki Saito*
Affiliation:
Toshiba Corporation, Microelectronics Center Tamagawa Works, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
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Abstract

This paper reports the variation of carrier concentration depth profile in Si-implanted channel conductive layers of liquid- encapsulated-Czochralski- technique (LEC) grown GaAs crystals, the Vth scattering amplitude variation and the averaged Vth variation before and after phospho-silicate-glass (PSG) cap annealing of high-dose-Si-ion implanted crystal layers. Furthermore, the PSG-cap-annealing Vth variation difference between the As-rich LEC crystal and the near-stoichiometric LEC crystal is presented. These results, and carrier depth profile of Si-implanted active layers in LEC GaAs crystals through model of implanted Si atom move (like diffusion) and Si atom capture of a crystal lattice and siteing on lattice are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 719
Copyright
Copyright © Materials Research Society 1992

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References

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