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Carrier Injection and Space Charge Effects in a-Si:H / Crystaiine Si Heterojunctions

Published online by Cambridge University Press:  21 February 2011

A. Sanders ,
C. Swiatkowski ,
P. Grunow ,
W. Hirsch ,
H. C. Neitzert  and
M. Kunst
A. Sanders
Affiliation:
Hahn-Meitner-Institut, dept S1: Solare Energetik, Glienicker Strafle 100, 1000 Berlin 39, Germany
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institut, dept S1: Solare Energetik, Glienicker Strafle 100, 1000 Berlin 39, Germany
P. Grunow
Affiliation:
Hahn-Meitner-Institut, dept S1: Solare Energetik, Glienicker Strafle 100, 1000 Berlin 39, Germany
W. Hirsch
Affiliation:
Hahn-Meitner-Institut, dept S1: Solare Energetik, Glienicker Strafle 100, 1000 Berlin 39, Germany
H. C. Neitzert
Affiliation:
Hahn-Meitner-Institut, dept S1: Solare Energetik, Glienicker Strafle 100, 1000 Berlin 39, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, dept S1: Solare Energetik, Glienicker Strafle 100, 1000 Berlin 39, Germany
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Abstract

A study of excess carrier kinetics in a-Si:H / crystalline n-Si heterojunctions by transient photoconductivity measurements as a function of the excitation density is presented. It is observed that excess carriers can be injected from the a-Si:H in the c-Si part of the junctions, where the time associated to this injection process can be clearly resolved. The number of injected carriers increases with the number of excess carriers induced in the a-Si:H at low excitation density reaching a limit in the moderate excitation range. The driving force of the injection process is tentatively ascribed to the space charge field at the interface. The injection efficiency is estimated to be about 10%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 143
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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