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Carbon-Induced Ge Islands on Si(001) Grown by LPCVD

Published online by Cambridge University Press:  10 February 2011

M. Goryll ,
L. Vescan  and
H. Lüth
M. Goryll
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
L. Vescan
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

The formation of carbon-induced Ge islands has been studied using low-pressure chemical vapour deposition (LPCVD) of Ge on Si(001) at temperatures between 600°C and 700°C. Propane (C3 H8 ) diluted in He was used as a carbon source. The experiments show that the influence of carbon was most significant for deposition at low growth temperature of the Ge island layer. Small-sized islands with a narrow size distribution could be achieved using a carbon adsorption layer. Compared to a sample grown without this layer, the size distribution was significantly smaller. An enhancement of the growth rate of Ge, as seen from Rutherford backscattering spectroscopy (RBS) will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 115
Copyright
Copyright © Materials Research Society 2000

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References

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