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Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates

Published online by Cambridge University Press:  26 February 2011

G. A. J. Amaratunga ,
W. I. Milne ,
A. Putnis ,
K. K. Chan ,
K. J. Clay  and
M. E. Welland
G. A. J. Amaratunga
Affiliation:
Engineering Dept., Cambridge University, Cambridge CB2 1PZ, U.K.
W. I. Milne
Affiliation:
Engineering Dept., Cambridge University, Cambridge CB2 1PZ, U.K.
A. Putnis
Affiliation:
Engineering Dept., Cambridge University, Cambridge CB2 1PZ, U.K.
K. K. Chan
Affiliation:
Engineering Dept., Cambridge University, Cambridge CB2 1PZ, U.K.
K. J. Clay
Affiliation:
Engineering Dept., Cambridge University, Cambridge CB2 1PZ, U.K.
M. E. Welland
Affiliation:
Engineering Dept., Cambridge University, Cambridge CB2 1PZ, U.K.
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Abstract

Thin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 377
Copyright
Copyright © Materials Research Society 1990

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References

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