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Carbon Precipitation in Cz and Efg Silicon

Published online by Cambridge University Press:  28 February 2011

S. Q. Feng ,
J. P. Kalejs  and
D. G. Ast
S. Q. Feng
Affiliation:
Physics Department of Peking University, PRC
J. P. Kalejs
Affiliation:
Mobil Solar Energy Corporation, 16 Hickory Drive, Waltham, MA 02154, U.S.A.
D. G. Ast
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
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Abstract

The defects formed in carbon rich CZ and EFG silicon after a 900°C, 160 or 560 min long, phosphorous diffusion were studied with TEM. Besides misfit dislocations, numerous precipitates were observed in the junction region in both materials. However, no precipitates were found in the bulk. The precipitates in CZ had a larger strain field than those in EFG material. The difference in the extent of the strain field of precipitates in CZ and EFG silicon can be ascribed to the higher oxygen content in CZ silicon. It appears that oxygen is involved in the Si-self interstitial promoted precipitation of carbon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 439
Copyright
Copyright © Materials Research Society 1986

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References

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