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Carbon in Crystalline Silicon

Published online by Cambridge University Press:  28 February 2011

Ronald C. Newman
Ronald C. Newman*
Affiliation:
J. J. Thomson Physical Laboratory, University of Reading, PO Box 220. Whiteknights, Reading. RG6 2AF, UK
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Abstract

Early measurements are reviewed relating to the solubility. the segregation coefficient, diffusion. Internal precipitation, the infrared absorption and the effect on the lattice parameter of silicon due to substitutional carbon. Interactions with oxygen and group III Impurities are mentioned. A survey is given of the effects of high energy irradiation and heat treatments on both FZ and CZ silicon containing carbon. A rich variety of defects can form, but in general atomic structures have not been determined. The process of site switching from substitutional to interstitial locations which occurs by the selective trapping of self-Interstitials is proving to be invaluable in elucidating the mechanisms of various defect reactions, particularly those Involving oxygen Impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 403
Copyright
Copyright © Materials Research Society 1986

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References

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