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Carbon Film Deposition On Silicon Using Low Energy Ion Beams

Published online by Cambridge University Press:  16 February 2011

Qin Fuguang ,
Yao Zhenyu ,
Ren Zhizhang ,
S.-T. Lee ,
I. Bello ,
X Feng ,
L. J. Huang  and
W. M. Lau
Qin Fuguang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, R.P. China
Yao Zhenyu
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, R.P. China
Ren Zhizhang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, R.P. China
S.-T. Lee
Affiliation:
Eastman Kodak Company, Rochester, NY 14650-2132, USA
I. Bello
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
X Feng
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
L. J. Huang
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
W. M. Lau
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
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Abstract

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 307
Copyright
Copyright © Materials Research Society 1991

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References

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