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Capacitance Characterization of Amorphous Silicon/Amorphous Silicon Germanium Heterostructures

Published online by Cambridge University Press:  10 February 2011

C. Palsule ,
U. Paschen ,
J. D. Cohen ,
J. Yang  and
S. Guha
C. Palsule
Affiliation:
Department of Physics, University of Oregon, Eugene, OR, 97403
U. Paschen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR, 97403
J. D. Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR, 97403
J. Yang
Affiliation:
United Solar Systems Corporation, 1100 West Maple Road, Troy, MI, 48084.
S. Guha
Affiliation:
United Solar Systems Corporation, 1100 West Maple Road, Troy, MI, 48084.
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Abstract

We have performed voltage-pulse stimulated capacitance transient measurements along with other junction capacitance measurements on a-Si:H/ a-Si,Ge:H heterostructures deposited on p-type crystalline silicon using the glow discharge technique. For a filling pulse that puts the c-Si/a-Si:H junction in forward bias, the capacitance transients consist of two components- a fast component corresponding to electron emission and a slow component corresponding to hole emission. For a fixed starting reverse bias, we have found that the density of trapped holes is proportional to the product of the filling pulse voltage and the filling pulse width and reaches a saturation value at a certain value of the product. These hole traps appear to reside at or very close to the a-Si:H/a-Si,Ge:H interface. The estimated trap concentration is around 1011/cm2 and is independent of temperature and applied bias, ruling out the creation of the traps during the filling pulse. We also report results on samples in which a-Si:H/ a-Si,Ge:H interface has been modified during growth to alter the concentration of the hole traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 209
Copyright
Copyright © Materials Research Society 1996

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