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Capacitance and Transient Photocapacitance Studies of Tetrahedral Amorphous Carbon

Published online by Cambridge University Press:  14 March 2011

Kimon C. Palinginis ,
A. Ilie ,
W.I. Milne  and
J. David Cohen
Kimon C. Palinginis
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A
A. Ilie
Affiliation:
Engineering Department, University of Cambridge, CB2 1PZ, U.K
W.I. Milne
Affiliation:
Engineering Department, University of Cambridge, CB2 1PZ, U.K
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A
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Abstract

We have applied junction capacitance and transient photocapacitance measurements to undoped tetrahedral amorphous carbon (ta-C)/silicon carbide (SiC) heterostructures to deduce defect densities and defect distributions in ta-C. The junction capacitance measurements show two thermally activated processes. One can be related to the activation of carriers out of defects at the ta-C/SiC interface while the other one with an activation energy of 0.36eV is an intrinsic property of the ta-C. The defect density at the ta-C/SiC interface is estimated to be roughly 9 ± 2 × 109 cm−2. The transient photocapacitance measurements have allowed us to observe the broader band tail of ta-C, giving a value (Urbach energy) of 230meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , R6.6.1
Copyright
Copyright © Materials Research Society 2000

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References

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