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Calculation of Modal Contributions to Heat Transfer across Si/Ge Interfaces

Published online by Cambridge University Press:  15 July 2015

Kiarash Gordiz  and
Asegun Henry
Kiarash Gordiz
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta GA, 30332, USA
Asegun Henry
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta GA, 30332, USA School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA, 30332, USA
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Abstract

Using our newly proposed interface conductance modal analysis (ICMA) formalism, we study the modal contributions to thermal interface conductance (G ) across the interface of crystalline silicon and crystalline germanium. We present the accumulation functions of G at different temperatures and predict G as a function of temperature after proper quantum-corrections have been applied. Different classes of vibration are identified across the interface, among which interfacial modes are determined to have the highest per mode contribution to G . The results demonstrate the ability of ICMA in not only calculating the spectral contributions to G but exactly pinpointing the shape of each vibrational eigen state.

Keywords

simulationSiGe
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1779: Symposium M – Nanoscale Heat Transport―From Fundamentals to Devices , 2015 , pp. 21 - 26
Copyright
Copyright © Materials Research Society 2015 

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References

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