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C11b-C40 Transformation-Induced 1/4<111> Faults in Mosi2

Published online by Cambridge University Press:  25 February 2011

B.K. Kad ,
K.S. Vecchio ,
B.P. Bewlay  and
R.J. Asaro
B.K. Kad
Affiliation:
Department of Applied Mechanics & Engineering Sciences, University of California-San Diego, LaJolla, CA 92093-0411.
K.S. Vecchio
Affiliation:
Department of Applied Mechanics & Engineering Sciences, University of California-San Diego, LaJolla, CA 92093-0411.
B.P. Bewlay
Affiliation:
GE Corporate Research & Development, Schenectady, NY 12301.
R.J. Asaro
Affiliation:
Department of Applied Mechanics & Engineering Sciences, University of California-San Diego, LaJolla, CA 92093-0411.
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Abstract

Previous experimental evidence for the transformation of MoSi2 from the high temperature C40 structure to the low temperature C11b structure has been re-examined such that the fault character and the existence of the C40 structure is now questioned. New observations of faults in single crystals prepared over a range of growth rates from 1cm/hr to 30cm/hr are presented. Transformation-induced stacking faults, which were previously described as 1/4<111> lying on {110), have been re-identified as 1/6[001] condensation faults on (001). These faults were probably produced by silicon loss during crystal growth. The contribution that these faults may make to macroscopic strain under the action of diffusion-assisted mechanisms at elevated temperatures is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 322: Symposium F – High-Temperature Silicides and Refractory Alloys , 1993 , 49
Copyright
Copyright © Materials Research Society 1994

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