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Buried-shallow-implant (Bsi) process for High Efficiency Microwave power Mesfets

Published online by Cambridge University Press:  26 February 2011

S. G. Liu  and
D. R. Capewell
S. G. Liu
Affiliation:
David Sarnoff Research Center, Princeton N. J. 08543
D. R. Capewell
Affiliation:
David Sarnoff Research Center, Princeton N. J. 08543
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Abstract

We present a hybrid implant epitaxy process that alleviates the inherent depth-width-dependent limitation of ion implantation. This technique allows shallow implants, which produce a thin active N layer with a controlled doping gradient, to be buried at an arbitrary depth below the less-critical, epitaxiallygrown surface layer. The formation and characteristics of GaAs buried shallow-implant (BSI) layers for microwave power FETs will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 689
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Higgins, J. A., IEEE Trans. on Elec. Devices, 27, p. 1066 (1980).Google Scholar
2. Golo, J. M. and Trew, R. J., IEEE Trans. on MTT. 31, p. 1066 (1983)CrossRefGoogle Scholar
3. Pavlidis, D., Cazaux, J. L., and Graffeuil, J., IEEE Trans. on NTT, 36, 642(1988).Google Scholar
4. Liu, S. G., Taylor, G. C., Klatskin, J. R., Camisa, R., and Capewell, D. R., to be published.Google Scholar
5. Wemple, S. H, Niehaas, W. C., Cox, H. M., Dilorenzo, J V. Schlosser, W. O., IEEE Trans. on Elec. Device,27, p. 1013 (1980).Google Scholar
6. Taylor, G. C., Eron, M., Bechtle, D., Liu, S. G., and Camisa, R. L., IEEE Trans. on Elec. Devices, 34, 1259 (1987)Google Scholar
7. Tan, T. S., Stoneham, E. B., Patterson, G. and Collins, D. M., GaAs IC Symposium Digest, 38 (1983)Google Scholar
8. Liu, S. G., Douglas, E. C., Wu, C. P., Magee, C. W., Narayan, S. Y., Jolly, S. T., Kolondra, F., and Jain, S., RCA Review, 41, 227 (1980)Google Scholar
9. James Gibbons, F., Reynolds, S., Gronet, C., Vook, D., King, C., Opyd, W., Wilson, S., Nauka, C., Raid, G., Hull, R., Material Research Society Symposia Proceedings, 92, p. 281 (1987)CrossRefGoogle Scholar
10. Davies, G. J. and Williams, D., in The Technology and Physics of Molecular Beam Epitaxy, edited by Parker, E. H. C., ( Plenum Press, NY, 1985), p.24 Google Scholar
11. Walukiewicz, W. et. al., J. Appl. Phys., 50, p. 899 (1979).Google Scholar