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Buried Amorphous Layer in Gallium Arsenide

Published online by Cambridge University Press:  25 February 2011

D. Sengupta ,
M.C. Ridgway ,
J.M. Zemanski  and
S.T. Johnson
D. Sengupta
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia
M.C. Ridgway
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia
J.M. Zemanski
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia
S.T. Johnson
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia
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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 975
Copyright
Copyright © Materials Research Society 1990

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References

1 Mazey, D.J. and Nelson, R.S., Rad. Effects 1, 229 (1969).Google Scholar
2 Kular, S.S., Sealy, B.J., Stephens, K.G., Sadana, D.K. and Booker, G.R., Solid St. Elect. 23, 831 (1980).Google Scholar
3 Williams, J.S. and Harrison, H.B., Mat. Res. Symp. Proc. 1, 209 (1981).Google Scholar
4 Olson, G.L., Kokorowski, S.A., McFarlane, R.A. and Hess, L.D., Appl. Phys. Lett. 37, 1019 (1980).Google Scholar
5 Nissin, Y.I., Christel, L.A., Sigmon, T.W., Gibbons, J.F., Magee, T.J. and Ormond, R., Appl. Phys. Lett. 39, 598 (1981).Google Scholar
6 LiCoppe, C., Nissim, Y.I. and Meriadec, C., J. Appl. Phys. 58, 3084 (1985).Google Scholar
7 LiCoppe, C., Nissim, Y.I., Meriadec, C. and Krauz, P., J. Appl. Phys. 60, 1352 (1986).Google Scholar