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Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO3 single crystal thin films

Published online by Cambridge University Press:  17 March 2011

Young-Bae Park ,
Jennifer L. Ruglovsky ,
Matthew J. Dicken ,
Harry A. Atwater  and
Thomas J. Watson
Young-Bae Park
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Jennifer L. Ruglovsky
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Matthew J. Dicken
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Thomas J. Watson
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
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Abstract

Layer transfer of thin BaTiO3 films onto silicon-based substrates has been investigated. H+ and He+ ion implantation created a buried sacrificial layer in the BaTiO3 single crystals. Thermodynamics and kinetics of cavity nucleation and growth at the bonding interface have been investigated and single crystal thin film layers were transferred onto amorphous Si3N4 and Pt substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting. Also, after high dose ion implantation, the films remain single crystal and stoichiometry. Finally, characterization proves the layer-transferred thin films are ferroelectrically active, with domains and piezoresponse similar to bulk crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E2.3
Copyright
Copyright © Materials Research Society 2004

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References

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