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Bulk Homogeneity of Iron Doped InP

Published online by Cambridge University Press:  15 February 2011

J. Jimenez ,
M. Avella ,
M. A. Gonzalez ,
P. Martin ,
L. F. Sanz  and
M. Chafai
J. Jimenez
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
M. Avella
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
M. A. Gonzalez
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
P. Martin
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
L. F. Sanz
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
M. Chafai
Affiliation:
Física de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain
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Abstract

Fe- doped InP is studied by a spatially resolved photocurrent technique, probing electronic transitions related to the iron impurity levels. This scanning technique allows to get information on bulk homogeneity regarding to the electrically active iron impurity distribution. The presence of doping growth striations is revealed with a high sensitivity. Also results about the local photocurrent at the Cottrell atmospheres of the dislocations are shown. The role played by other defect levels in the photocurrent contrast is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 71
Copyright
Copyright © Materials Research Society 1994

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