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Bulk Homogeneity of Iron Doped InP
Published online by Cambridge University Press: 15 February 2011
Abstract
Fe- doped InP is studied by a spatially resolved photocurrent technique, probing electronic transitions related to the iron impurity levels. This scanning technique allows to get information on bulk homogeneity regarding to the electrically active iron impurity distribution. The presence of doping growth striations is revealed with a high sensitivity. Also results about the local photocurrent at the Cottrell atmospheres of the dislocations are shown. The role played by other defect levels in the photocurrent contrast is also discussed.
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- Copyright © Materials Research Society 1994