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Bulk Growth of SiC

Published online by Cambridge University Press:  01 February 2011

Peter Wellmann ,
Ralf P. Müller ,
Sakwe A. Sakwe ,
Ulrike Künecke ,
Philip Hens ,
Mathias Stockmeier ,
Katja Konias ,
Rainer Hock ,
Andreas Magerl  and
Michel Pons
Peter Wellmann
Affiliation:
[email protected], University of Erlangen-Nürnberg, Materials Department 6, Martenstr. 7, Erlangen, 91058, Germany
Ralf P. Müller
Affiliation:
[email protected], University of Erlangen-Nürnberg, Materials Department 6, Martenstr. 7, Erlangen, 91058, Germany
Sakwe A. Sakwe
Affiliation:
[email protected], University of Erlangen-Nürnberg, Materials Department 6, Martenstr. 7, Erlangen, 91058, Germany
Ulrike Künecke
Affiliation:
[email protected], University of Erlangen-Nürnberg, Materials Department 6, Martenstr. 7, Erlangen, 91058, Germany
Philip Hens
Affiliation:
[email protected], University of Erlangen-Nürnberg, Materials Department 6, Martenstr. 7, Erlangen, 91058, Germany
Mathias Stockmeier
Affiliation:
[email protected], University of Erlangen, Physics Department, Chair of Crystallography, Staudtstr. 3, Erlangen, 91058, Germany
Katja Konias
Affiliation:
[email protected], University of Erlangen, Physics Department, Chair of Crystallography, Staudtstr. 3, Erlangen, 91058, Germany
Rainer Hock
Affiliation:
[email protected], University of Erlangen, Physics Department, Chair of Crystallography, Staudtstr. 3, Erlangen, 91058, Germany
Andreas Magerl
Affiliation:
[email protected], University of Erlangen, Physics Department, Chair of Crystallography, Staudtstr. 3, Erlangen, 91058, Germany
Michel Pons
Affiliation:
[email protected], Institut National Polytechnique Grenoble, Labratoire de Thermodynamique et Physiochemie Métallurgiques, 1130 rue de la Piscine, Saint Martin D'Heres, N/A, France
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Abstract

The paper reviews the basics of SiC bulk growth by the physical vapor transport (PVT) method and discuss current and possible future concepts to improve crystalline quality. In-situ process visualization using x-rays, numerical modeling and advanced doping techniques will be briefly presented which support growth process optimization. The “pure” PVT technique will be compared with related developments like the so called Modified-PVT, Continuous-Feeding-PVT, High-Temperature-CVD and Halide-CVD concepts. Special emphasis will be put on dislocation generation and annihilation and concepts to reduce dislocation density during SiC bulk crystal growth. The dislocation study is based on a statistical approach. Rather than following the evolu-tion of a single defect, statistic data which reflect a more global dislocation density evolution are interpreted. In this context a new approach will be presented which relates thermally induced strain during growth and dislocation patterning in networks.

Keywords

crystal growthelectronic materialdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D01-01
Copyright
Copyright © Materials Research Society 2008

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References

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