Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:58:57.286Z Has data issue: false hasContentIssue false
  • English
  • Français

Bulk and Surface Electronic Properties of Oxide Dielectrics

Published online by Cambridge University Press:  10 February 2011

Victor E. Henrich
Victor E. Henrich*
Affiliation:
Surface Science Laboratory, Department of Applied Physics, Yale University, New Haven, CT 06520, [email protected]
Get access

Abstract

The electronic properties of oxides that are candidates for high-dielectric insulators in ULSI are discussed. The theoretical models that can be used to describe them are compared, and the properties of cation oxidation state and point defects associated with non-stoichiometry in the bulk and on the surface are considered. Metal-oxide surfaces often reconstruct, with the creation of a surface dipole moment The effect of overlayers on metal-oxide surfaces is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 435
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Cox, P.A., Transition Metal Oxides: An Introduction to Their Electronic Structure and Properties (Clarendon Press, Oxford, 1992).Google Scholar
2 Zhang, Z., Jeng, S.-P. and Henrich, V.E., Phys. Rev. B 43, 12004 (1991).10.1103/PhysRevB.43.12004Google Scholar
3 Padilla, J. and Vanderbilt, D., Surf. Sci. 418, 64 (1998).10.1016/S0039-6028(98)00670-0Google Scholar
4 Haruyama, Y., Kodaira, S., Aiura, Y., Bando, H., Nishihara, Y., Maruyama, T., Sakisaka, Y. and Kato, H., Phys. Rev. B 53, 8032 (1996).10.1103/PhysRevB.53.8032Google Scholar
5 Padilla, J. and Vanderbilt, D., Phys Rev. B 56, 1625 (1997).10.1103/PhysRevB.56.1625Google Scholar
6 Morant, C., Fernánndez, A., González-Elipe, A.R., Soriano, L., Stampfl, A., Bradshaw, A.M. and Sanz, J.M., Phys. Rev. B 52, 11711 (1995).10.1103/PhysRevB.52.11711Google Scholar
7 Henrich, V.E. and Cox, P.A., The Surface Science of Metal Oxides, (Cambridge University Press, Cambridge, 1994).Google Scholar
8 Davis, L.C., J. Appl. Phys. 59, R25, (1986).10.1063/1.336323Google Scholar
9 Guénard, P., Renard, G., Barbier, A. and Gautier-Soyer, M., Surf. Rev. Lett. 5, 321 (1997).10.1142/S0218625X98000591Google Scholar
10 Charlton, G., Howes, P.B., Nicklin, C.L., Steadman, P., Taylor, J.S.G., Muryn, C.A., Harte, S.P., Mercer, J., McGrath, R., Norman, D., Turner, T.S. and Thornton, G., Phys. Rev. Lett. 78, 495 (1997).10.1103/PhysRevLett.78.495Google Scholar
11 Ravikumar, V., Wolf, D. and Dravid, V.P., Phys. Rev. Lett. 74, 960 (1995).10.1103/PhysRevLett.74.960Google Scholar
12 McKee, R.A., Walker, F.J. and Chisholm, M.F., Phys. Rev. Lett. 81, 3014 (1998).10.1103/PhysRevLett.81.3014Google Scholar
13 Madey, T.E., Diebold, U. and Pan, J.M., in Adsorption on Ordered Surfaces of Ionic Solids and Thin Films, ed. Freund, H.J. and Umbach, E. (Springer, Berlin, 1993), p. 147.10.1007/978-3-642-78632-7_14Google Scholar
14 “Atomic Bonding at Metal/Oxide Interfaces,” in Proceedings of the International Workshop on Ceramic Interfaces: Properties and Applications III, ed. Smart, R. St.C and Nowotny, J., (Institute of Materials Press, London, 1998).Google Scholar
15 Reed, T.B., Free Energy of Formation of Binary Compounds (M.I.T. Press, Cambridge, 1971).Google Scholar
16 Zhang, Z. and Henrich, V.E., Surf. Sci. 277, 263 (1992).10.1016/0039-6028(92)90767-ZGoogle Scholar
17 Zangwill, A., Physics at Surfaces (Cambridge University Press, Cambridge, 1988).10.1017/CBO9780511622564Google Scholar
18 Henrich, V.E., Mater. Res. Soc. Symp. Proc. 357, 67 (1995).10.1557/PROC-357-67Google Scholar
19 Henrich, V.E. and Cox, P.A., Appl. Surf. Sci. 72, 277 (1993).10.1016/0169-4332(93)90363-GGoogle Scholar