Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:37:53.706Z Has data issue: false hasContentIssue false
  • English
  • Français

Built-In Strain in Polysilicon: Measurement and Application to Sensor Fabrication

Published online by Cambridge University Press:  10 February 2011

H. Guckel
H. Guckel*
Affiliation:
ECE Department, University of Wisconsin - Madison, Madison, WI 53706, [email protected]
Get access

Abstract

The built-in strain in deposited polysilicon films depends on film morphology. The strain may be compressive or tensile. Its magnitude and uniformity may be measured by using surface micro machining with test structures which require a single photomask level and use Euler buckling. Anneal cycles may be used to convert compressive strain to tensile or zero strain. Deposition and anneal cycles may be optimized to produce fine grained polysilicon with isotropic mechanical behavior.

Strain field control can improve yield by reducing surface sticking. This mechanical stiffening is used in, for instance, pressure transducer construction. Built-in and applied axial strain are used to change the resonant frequencies of clamped-clamped beams in a vacuum envelope where quality factors up to 300,000 have been measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 605: Symposium MM – Materials Science of Microelectromechanical Systems Devices II , 1999 , 3
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Burns, D.W., Micromechanics of Integrated Sensors and the Planar Processed Pressure Transducer, PhD thesis, University of Wisconsin – Madison, 1999.Google Scholar
[2] Howe, R.T. and Muller, R.S., “Integrated Resonant-Microbridge Vapor Sensor,” IEDM 1984, pp.213–216, 1984.Google Scholar
[3] Obermeier, E., Kopystynski, P., Niebl, R., “Characteristics of Polysilicon Layers and Their Application in Sensors,” 1986 IEEE Solid State Sensor Workshop, Hilton Head Island, SC, June, 1986.Google Scholar
[4] Guckel, H., Burns, D.W., Rutigliano, C.R., Showers, D.K., Uglow, J., “Fine Grained Polysilicon and its Application to Planar Pressure Transducers,” Transducers '87, pp. 277–282, 1987.Google Scholar
[5] Guckel, H., Randazzo, T., Burns, D.W., “A Simple Technique for the Determination of Mechanical Strain in Thin Films with Applications to Polysilicon,” J. Appl. Physics, Vol. 57, No. 5, pp. 1671–1675, March 1985.Google Scholar
[6] Guckel, H., Burns, D.W., Visser, C., Rutigliano, C., DeRoo, D., Christenson, T., Klomberg, P., Tilmans, H., “Processing Conditions for Polysilicon Films with Tensile Strain for Large Aspect Ratio Microstructures,” Solid State Sensors and Actuator Workshop, Hilton Head Island, SC, June 1988.Google Scholar
[7] Ahn, Y., Resonant Microbeam Electronic Oscillators for Strain Sensing, PhD thesis, University of Wisconsin – Madison, 1999.Google Scholar
[8] Sniegowski, J.J., “Design and Fabrication of Polysilicon Resonating Beam Force Transducers,” PhD Thesis, University of Wisconsin – Madison, 1991.Google Scholar
[9] Guckel, H., Buurs, D., Rutigliano, C., “Design and Construction Techniques for Planar Polysilicon Pressure Transducers with Piezoresistive Read-Out,” 1986 Solid State Sensor Workshop, Hilton Head Island, SC, June 1986.Google Scholar
[10] Zook, J.D., Burns, D.W., Herb, W.R., Guckel, H., Kang, J.W., Ahn, Y., “Optically Excited Self-Resonant Strain Transducers,” Digest of Technical Papers, Vol. 2, Transducers '95, Stockholm, Sweden, pp.600–603, June 1995.Google Scholar