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Brightness Degradation Controlled by Current Induced Metastable Defect Creation in a-SiC:H Based Light Emitting Diodes

Published online by Cambridge University Press:  15 February 2011

R. Rizzoli ,
C. Summonte ,
R. Galloni ,
M. Ruth ,
A. Desalvo ,
F. Zignanf ,
P. Rava ,
F. Demichelis ,
C. F. Pirri  and
E. Tresso
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R. Rizzoli
Affiliation:
CNR-LAMEL, via Gobetti 101, 40129 Bologna, Italy
C. Summonte
Affiliation:
CNR-LAMEL, via Gobetti 101, 40129 Bologna, Italy
R. Galloni
Affiliation:
CNR-LAMEL, via Gobetti 101, 40129 Bologna, Italy
M. Ruth
Affiliation:
CNR-LAMEL, via Gobetti 101, 40129 Bologna, Italy
A. Desalvo
Affiliation:
Dipartimento di Chimica Applicata e Scienza dei Materiali, Facoltà di Ingegneria, Università degli Studi di Bologna, viale Risorgimento 1, 40100 Bologna, Italy
F. Zignanf
Affiliation:
Dipartimento di Chimica Applicata e Scienza dei Materiali, Facoltà di Ingegneria, Università degli Studi di Bologna, viale Risorgimento 1, 40100 Bologna, Italy
P. Rava
Affiliation:
Dipartimento di Fisica ed Unità INFM del Politecnico, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
F. Demichelis
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
C. F. Pirri
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
E. Tresso
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
G. Crovini
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
F. Giorgis
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
A. Madan
Affiliation:
MVSystems, Inc., 327 Lamb Lane, 80401 Golden, Colorado
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Abstract

A study of the electroluminescence degradation of a-SiC:H based light emitting devices (LED) is presented for the first time. The best initial peak brightness obtained is 4.2 cd/m2. All LEDs reported in this paper emit a red light which, when operated under continuous bias in a not fully darkened room, is visible for several minutes, depending on degradation rate. The time dependence of LED degradation, which is reversible upon annealing, can be explained if self-annealing is taken into account. There is evidence of an improved LED performance for lower temperature operation. Pulsed operation, with respect to dc operation, produces a markedly lower defect production rate, associated to a higher brightness after degradation. The possibility of some optimization of the operation parameters (peak current, duty cycle) is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 809
Copyright
Copyright © Materials Research Society 1995

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References

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