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Bridgman Growth and Characterization of Bulk Single Crystals of Ga1−xInxSb for Thermophotovoltaic Applications

Published online by Cambridge University Press:  10 February 2011

J. R. Boyer  and
W. T. Haines
J. R. Boyer
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
W. T. Haines
Affiliation:
Lockheed Martin Corporation, Schenectady, NY 12301
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Abstract

Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5–0.7 eV) III-V semiconductors. The use of mixed pseudo-binary compounds allows for the tailoring of the lattice parameter and the bandgap of the material. Conventional deposition techniques (i.e., epitaxy) for producing such ternary or quaternary materials are typically slow and expensive. Production of bulk single crystals of ternary materials, for example Gal-xlnxSb, is expected to dramatically reduce such material costs. Bulk single crystals of Ga1−xInxSb have been prepared using a Bridgman technique in a two-zone furnace. These crystals are 19 mm in diameter by approximately 50 mm long and were produced using seeds of the same diameter. The effects of growth rate and starting materials on the composition and quality of these crystals will be discussed and compared with other attempts to produce single crystals of this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 45
Copyright
Copyright © Materials Research Society 1998

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References

1. The Second NREL Conference on Thermophotovoltaic Generation of Electricity, edited by Benner, J., Coutts, T., and Ginley, D. (Am. Inst. Phys. Proc. 358, Woodbury, NY, 1996).Google Scholar
2. Vul', A. Ya. and Goldberg, Yu. A. in Handbook Series on Semiconductor Parameters. Vol.1, edited by Levinshtein, M., Rumyantsev, S., and Shur, M. (World Scientific, Singapore, 1996), p. 125 and 191–192.Google Scholar
3. Tanaka, A., Watanabe, A., Kimura, M., and Sukegawa, T., J. Crystal Growth 135, p. 269 (1994).Google Scholar
4. Hamaker, R. and White, W., J. Electrochem. Soc. 116, p. 478 (1969).Google Scholar
5. Ivanov-Omskii, V. and Kolomiets, B., J. Soy. Phys. Solid State 1, p 834 (1959).Google Scholar
6. Yee, J., Lin, M., Sarmi, K., and Wilcox, W., J. Crystal Growth 30, p. 185 (1975).Google Scholar
7. Bachmann, K., Thiel, T., Schreiber, H., and Rubin, J., J. Electronic Mat. 9, p. 445 (1980).Google Scholar
8. Pfann, W., Zone Melting, 2nd Ed., John Wiley & Sons, Inc., New York, 1966, p. 11.Google Scholar
9. Dutta, P., Bhat, H., and Kumar, V., J. Appl. Phys. 81, p. 5821 (1997).Google Scholar
10. Ashley, T., Beswick, J.A., Cockayne, B., and Elliott, C.T., 7th Int. Conf. on Narrow Gap Semicond., edited by Reno, J. L. (Inst. Phys. Conf. Ser. No. 144, Bristol, 1995).Google Scholar