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Bound-exciton recombination in MgxZn1-xO thin films

Published online by Cambridge University Press:  31 January 2011

Christof Peter Dietrich ,
Alexander Müller ,
Marko Stölzel ,
Martin Lange ,
Gabriele Benndorf ,
Holger von Wenckstern  and
Marius Grundmann
Christof Peter Dietrich
Affiliation:
[email protected]
Alexander Müller
Affiliation:
[email protected], Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany
Marko Stölzel
Affiliation:
[email protected], Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany
Martin Lange
Affiliation:
[email protected], Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany
Gabriele Benndorf
Affiliation:
[email protected], Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany
Holger von Wenckstern
Affiliation:
[email protected], Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany
Marius Grundmann
Affiliation:
[email protected], Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany
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Abstract

Excitons in semiconductor alloys feel a random disorder potential leading to inhomogeneous line broadening and a lack of knowledge about the dominating recombination processes. Nevertheless, we demonstrate competing localization effects due to disorder (random potential fluctuations) and shallow point defects. We were able to spectrally separate donor-bound and quasi-free excitons within the whole wurtzite-type composition range of MgxZn1-xO (0 ≤ x ≤ 0.33) using spectrally resolved (x ≤ 0.06) and time-resolved photoluminescence (x ≥ 0.08). We found out that donor-bound excitons dominate photoluminescence spectra even for Mg-contents up to x = 0.18 and still appear for x = 0.33.

Keywords

alloyII-VIluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H03-08
Copyright
Copyright © Materials Research Society 2010

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