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Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures

Published online by Cambridge University Press:  10 February 2011

W. G. Perry ,
T. Zheleva ,
K. J. Linthicum ,
M. D. Bremser ,
R. F. Davis ,
W. Shan  and
J. J. Song
W. G. Perry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695–7907
T. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695–7907
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695–7907
M. D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695–7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695–7907
W. Shan
Affiliation:
Center for Laser Research, Oklahoma State University, Stillwater, OK 74078
J. J. Song
Affiliation:
Center for Laser Research, Oklahoma State University, Stillwater, OK 74078
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Abstract

Biaxial strains resulting from mismatches in thermal expansion coefficients and lattice parameters in 22 GaN films grown on A1N buffer layers previously deposited on vicinal and on-axis 6H-SiC(0001) substrates were measured via changes in the c-axis lattice parameter (c). Six of the films were in compression, indicating the residual strain due to lattice mismatch was not relieved. A Poisson's ratio of v=0.18 was calculated. The bound exciton energy (EBx) was a linear function of these strains. The shift in EBx with film stress was 23 meV/GPa. The role of the SiC off-axis tilt was investigated for GaN films grown concurrently on the vicinal and on-axis 6H-SiC substrates. Marked variations in EBx and c were observed, with a maximum shift of ΔEBx = 15 meV and Δc = 0.0042 Å. Threading dislocations densities of ~1010/cm2 and ~108/cm2 were determined for GaN films grown on vicinal and on-axis SiC, respectively. A 0.9% residual compressive strain at the GaN/AIN interface was observed by high resolution transmission electron microscopy (HRTEM). It is proposed that the on-axis SiC substrate does not offer a sufficient density of steps for defect formation to relieve the lattice mismatch between GaN and A1N and A1N and SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 847
Copyright
Copyright © Materials Research Society 1997

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