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Boron Segregation and Electrical Properties in Polycrystalline SiGeC

Published online by Cambridge University Press:  21 March 2011

E. J. Stewart ,
M. S. Carroll  and
J.C. Sturm
E. J. Stewart
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical EngineeringPrinceton University, Princeton NJ
M. S. Carroll
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical EngineeringPrinceton University, Princeton NJ
J.C. Sturm
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical EngineeringPrinceton University, Princeton NJ
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Abstract

Previously, it has been reported that PMOS capacitors with heavily boron-doped polycrystalline SiGeC gates are less susceptible to boron penetration than those with poly Si gates [1]. Boron appears to accumulate in the poly SiGeC layers during anneals, reducing boron outdiffusion from the gate despite high boron levels in the poly SiGeC at the gate/oxide interface. In this abstract, we report clear evidence of strong boron segregation to polycrystalline SiGeC layers from poly Si, with boron concentration in poly SiGeC (Ge=25%, C=1.5%) increasing to four times that of adjacent poly Si layers. A separate experiment confirms that this result is not due to any SIMS artifacts. Electrical measurements of heavily in-situ doped single layer samples show that the conductivity of poly SiGeC is similar to poly Si and remains roughly constant with annealing at 800°C. However, in a two-layer sample where the poly SiGeC is initially lightly doped and subsequently heavily doped by diffusion by from an adjacent poly Si layer, conductivity appears lower than in poly Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J6.9
Copyright
Copyright © Materials Research Society 2001

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References

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