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Boron Redistribution During Transient Thermal Metal Silicide Growth on Si

Published online by Cambridge University Press:  25 February 2011

C.J. Sofield ,
R.E. Harper  and
P.J. Rosser
C.J. Sofield
Affiliation:
UKAEA Harwell, Didcot, Oxon, U.K.
R.E. Harper
Affiliation:
Dept. of Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
P.J. Rosser
Affiliation:
Standard Telecommunication Laboratory Ltd., Harlow, U.K.
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Abstract

We have used the heavy ion elastic recoil technique to study B distribution changes during Co and Ti di silicide formation on B implanted single crystal Si wafers. B diffuses to the interface of TiSi2 and Si and to the surface of CoSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 445
Copyright
Copyright © Materials Research Society 1985

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References

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