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Boron Phosphide as a Refractory Semiconductor

Published online by Cambridge University Press:  26 February 2011

Y. Kumashiro ,
M. Hirabayashi  and
S. Takagi
Y. Kumashiro
Affiliation:
Yokohama National University, Tokiwadai 156 Hodgoya-ku, Yokahama, Kanagawa, 240 Japan
M. Hirabayashi
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki, 305 Japan
S. Takagi
Affiliation:
Daido Steel Co.Ltd., 2–30 Daido-cho, Minami-ku, Nagoya, Aichi 457, Japan
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Abstract

The crystal growth, characterization and various characteristics such as electrical, thermal and semiconducting properties of boron phosphide (BP) single crystalline wafers made by chemical vapor deposition technique are summrized. It is demonstrated that Schottky diode using single crystal and thermoelectric device employing sintered polycrystal are promising application for electronic materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 585
Copyright
Copyright © Materials Research Society 1990

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References

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