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Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers

Published online by Cambridge University Press:  17 March 2011

M. S. Carroll  and
J. C. Sturm
M. S. Carroll*
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton NJ 08544
J. C. Sturm
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton NJ 08544
*
Current address: Sandia National Laboratories, Albuquerque, NM 87185-1077
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Abstract

Substitutional carbon is known to locally reduce silicon self-interstitial concentrations and act as a barrier to self-interstitial migration through the carbon rich regions. A silicon spacer between two carbon rich SiGe layers is fabricated in this work to examine self-interstitial generation in a region that is isolated from self-interstitial formation at the surface or in the silicon bulk. Boron marker layers above, below and in between two SiGeC layers are used to monitor the self-interstitial concentration between the substitutional carbon. No evidence of self- interstitial depletion in the silicon spacer is observed, despite annealing in conditions believed sufficient to allow the self-interstitials to reach and react with surrounding substitutional carbon. Simulations of the self-interstitial and carbon indicate that the silicon self interstitial concentration in the spacer layer can be sustained in part due to a silicon self-interstitial recycling process through a reverse “kick-out” reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C3.5
Copyright
Copyright © Materials Research Society 2004

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References

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