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Bonding in Thin Epitaxial CoSi2 Films on Si(100)

Published online by Cambridge University Press:  21 February 2011

David D. Chambliss ,
T. N. Rhodin ,
J. E. Rowe  and
S. M. Yalisove
David D. Chambliss
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853
T. N. Rhodin
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca NY 14853
J. E. Rowe
Affiliation:
AT&T Bell Laboratories, Murray Hill NJ 07974
S. M. Yalisove
Affiliation:
AT&T Bell Laboratories, Murray Hill NJ 07974
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Abstract

Epitaxy of CoSi2 layers on Si crystal surfaces can be strongly influenced by growing appropriate template layers. The electronic structure of thin (∼7Å) epitaxial CoSi2 films on Si(100) has been studied with angle-resolved photoemission to investigate atomic bonding in the layers and at their boundaries. Most Co atoms in the layers are in a CoSi2-like environment, including those Co atoms near the free surface. Cobalt atoms at the Si-CoSi 2 interface seem to have fewer Si neighbors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 143: Symposium V – Synchrotron Radiation in Materials Research , 1988 , 67
Copyright
Copyright © Materials Research Society 1989

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