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Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System

Published online by Cambridge University Press:  21 March 2011

S. T. Pantelides ,
R. Buczko ,
M. Di Ventra ,
S. Wang ,
S.-G. Kim ,
S. J. PennycooK ,
G. Duscher ,
L. C. Feldman ,
K. Mcdonald  and
R. K. Chanana
...Show all authors
S. T. Pantelides
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. Buczko
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
M. Di Ventra
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
S. Wang
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
S.-G. Kim
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
S. J. PennycooK
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
G. Duscher
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
L. C. Feldman
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
K. Mcdonald
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
R. K. Chanana
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
R. A. Weller
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN 37235
J. R. Williams
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849
G. Y. Chung
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849
C. C. Tin
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849
T. Isaacs-Smith
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849
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Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiCSiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H3.3
Copyright
Copyright © Materials Research Society 2001

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References

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