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Published online by Cambridge University Press: 21 February 2011
Photon stimulated desorption of fluorine ions from silicon surfaces was studied via excitation of the Si 2p core level with synchrotron radiation. These results showed that the process is chemically selective in that the removal of a fluorine ion from a silicon species in a given oxidation state can be enhanced by tuning the photon energy to the excitation wavelength corresponding to a transition from the 2p core level of the bonding atom to the conduction band minimum. This process was studied as a possible means for the production of surfaces with selected compositions of species. The results of selective exposures of fluorinated surfaces to monochromatized radiation indicated that secondary desorption processes and the inherent chemistry of the surface reactions can override the effects of selective desorption. Other possibilities for selective surface reactions via core-level excitations are discussed.