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Bombarding Effects of Gas Cluster Ion Beams on Sapphire Surfaces; Characteristics of Modified Layers and their Mechanical and Optical Properties

Published online by Cambridge University Press:  21 February 2011

D. Takeuchi ,
J. Matsuo  and
I. Yamada
D. Takeuchi
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606 JAPAN
J. Matsuo
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606 JAPAN
I. Yamada
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606 JAPAN
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Abstract

Gas cluster ions contain tens, hundreds or even more than thousands of atoms or molecules as ionized particles. It has been shown that the bombarding effects of gas cluster ions on solid surfaces are quite different from those by monomer ions and involve unique material processing characteristics. In order to make clear the bombarding effects, a study of surface modification of sapphire by Ar and CO2 gas cluster ion beams has been performed. Thickness of the damaged layer and surface roughness produced on sapphire depends strongly on cluster ion energy. Damage layer thickness on a sapphire surface bombarded by 150 keV clusters with average size of about 3000 atoms was 40Å. No significant difference was observed in IR transmittance after cluster bombardment. Mechanical properties of sapphire surfaces can be changed by cluster irradiation at a dose of 1011 ions/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 279
Copyright
Copyright © Materials Research Society 1996

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