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Bismuth Overlayer Formation on GaAs(110)

Published online by Cambridge University Press:  25 February 2011

S.-L. Chang ,
T. Guo ,
W.K. Ford ,
A. Bowler  and
E.S. Hood
S.-L. Chang
Affiliation:
Advanced Materials Center and the Departments of Physics and Chemistry, Montana State University, Bozeman, MT 59715
T. Guo
Affiliation:
Advanced Materials Center and the Departments of Physics and Chemistry, Montana State University, Bozeman, MT 59715
W.K. Ford
Affiliation:
Advanced Materials Center and the Departments of Physics and Chemistry, Montana State University, Bozeman, MT 59715
A. Bowler
Affiliation:
Advanced Materials Center and the Departments of Physics and Chemistry, Montana State University, Bozeman, MT 59715
E.S. Hood
Affiliation:
Advanced Materials Center and the Departments of Physics and Chemistry, Montana State University, Bozeman, MT 59715
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Abstract

The temperature and coverage dependent ordering of bismuth overlayers on GaAs(110) is examined using low energy electron diffraction (LEED). Sixth order electron diffraction profiles associated with overlayer ordering are observed at coverages of 0.7, 1.0, and 1.5 monolayers (ML) and for temperatures ranging from -110 C to 200 C. The full-width at half-maxima (FWHM) of the sixth-order spots are examined. Profile analysis reveals narrowing widths with increasing annealing temperature, indicating an improvement of the long-range ordering of the overlayers. Differences in inter- and intrachain ordering are observed, analyzed, and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 45
Copyright
Copyright © Materials Research Society 1990

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References

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