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Bimetallic Precursors for Ferroelectric Thin Films; Molecular Control of Stoichiometry

Published online by Cambridge University Press:  22 February 2011

Brian A. Vaartstra
Brian A. Vaartstra*
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Dr., Danbury, CT 06810
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Abstract

The application of ferroelectric oxides in microelectronic and optical devices is critically dependent upon methods to deposit high quality thin films. A major factor influencing the film quality is non-ideal metal stoichiometries caused by process variables. Materials such as PbTiO3 and POZrO3 are well suited for stoichiometric control via molecular precursors having the required metal ratio, eliminating many process variables. Bimetallic precursors for the deposition of lead titanate and PZT thin films have been designed in order to optimize control over the metal stoichiometry. This is accomplished by the synthesis of volatile metalorganic compounds having a 1:1 ratio of Pb:Ti or Pb:Zr. Synthesis and characterization of these novel compounds are presented, and viability for metalorganic chemical vapor deposition (MOCVD) is discussed, based upon decomposition and volatility studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 689
Copyright
Copyright © Materials Research Society 1993

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References

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