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Beic Investigation of Defects Induced in Cw Beam-Annealed Si

Published online by Cambridge University Press:  15 February 2011

N.H. Sheng ,
M. Mizuta  and
J.L. Merz
N.H. Sheng
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, 93106, USA
M. Mizuta
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, 93106, USA
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, 93106, USA
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Abstract

EBIC has been used to investigate the beam-induced damage in As+ -implanted Si subjected to scanned laser or electronbeam annealing. Comparison is made between these annealing techniques; in general, electron-beam annealing is found to give superior results. In addition, several different experiments combining these techniques are described. Samples were pre-annealed prior to laser annealing, using either thermal or electron-beam annealing. Other samples were given a thermal post-anneal after laser-annealing. The effect of these treatments on defect formation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 155
Copyright
Copyright © Materials Research Society 1981

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References

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