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Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

Published online by Cambridge University Press:  15 February 2011

K Tanahashi ,
N. Inoue  and
Y. Mizokawa
K Tanahashi
Affiliation:
College of Intergrated Arts and Science, Osaka Prefecture University 1–1; Gakuencho, Sakai, Osaka, 593 Japan
N. Inoue
Affiliation:
Research Institute for Advanced Science and Technology, Osaka Prefecture University 1–2, Gakuencho, Sakai, Osaka, 593 Japan
Y. Mizokawa
Affiliation:
College of Intergrated Arts and Science, Osaka Prefecture University 1–1; Gakuencho, Sakai, Osaka, 593 Japan
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Abstract

The origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 131
Copyright
Copyright © Materials Research Society 1997

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References

[1] Foll, H. and Kolbesen, B.O., Appl. Phys. 8, 319 (1975).Google Scholar
[2] Rocksnoer, P.J. and Boom, M.M.B. Van den, J. Cryst. Growth, 53, 563 (1981)Google Scholar
[3] Inoue, N., Osaka, J., and Wada, K., J. Electrochemical Soc., 129, 2780 (1982).Google Scholar
[4] Wada, K., Nakanishi, H., Takaoka, H. and Inoue, N., J. Cryst. Growth, 57, 535 (1982).Google Scholar
[5] Miyagi, M., Wada, K., Osaka, J. and Inoue, N., Appl. Phys. Lett., 40, 719 (1982).Google Scholar
[6] Itsumi, M. and Aoyama, S., Extended Abstract, 184th Meeting of The Electrochemical Society, #256 1993).Google Scholar
[7] Itsumi, M., Akiya, H., Ueki, T., Tomita, M. and Yamawaki, M., J. Appl. Phys., 78, 5984 (1995).Google Scholar
[8] Kitamura, T., Yanase, Y., Horie, H., Miyazaki, M. and Ochiai, T., Extended Abstract Vol, 1, 43th Spring Meeting, Japan Soc. Appl. Phys., 26P-X-6, p. 184 (1996).Google Scholar
[9] Wijaranakula, W., J. Electrochemical Soc., 139, 604 (1992)Google Scholar
[10] Kato, M., Ikeda, Y. and Kitagawa, Y., Extended Abstract Vol.1, 57th Fall Meeting, Japan Soc. Appl. Phys., 8a-ZG-6, p. 212 (1996).Google Scholar
[11] Nishimura, M., Yoshino, S., Shimura, S., Motoura, H. and Hikone, T., Extended Abstract Vol.1, 57th Fall Meeting, Japan Soc. Appl. Phys., 8a-ZG-7, p. 213 (1996).Google Scholar
[12] Nishikawa, H., Tanaka, T., Yanase, Y and Hourai, M., Extended Abstract Vol.1, 57th Fall Meeting, Japan Soc. Appl. Phys., 8p-ZG-2, p. 214 (1996).Google Scholar
[13] Vechten, J. A. Van, Phys. Rev. B, 17, 3197 (1978).Google Scholar
[14] Wijaranakula, W. and Chiou, H. D., Appl. Phys. Lett., 64, 1030 (1994).Google Scholar
[15] Kiritani, M., Shimomura, Y. and Yoshida, S., J. Phys. Soc. Japan, 19, 1624 (1964).Google Scholar
[16] Nakamura, K., Saisyoji, T., Kubota, T. and Tomioka, J., Extended Abstract Vol.1, 57th Fall Meeting, Japan Soc. Appl. Phys., 7p-ZG-4, p. 161 (1996).Google Scholar
[17] Frank, F. C., Metal Surface, ASM 1 (1963).Google Scholar
[18] Hu, S. M., J. Appl. Phys., 52, 3974 (1981).Google Scholar
[19] Wada, K. and Inoue, N., J. Appl. Phys., 58, 1183 (1985).Google Scholar
[20] Habu, R., Yunoki, I., Saito, T. and Tomiura, A., Jpn. J. Appl. Phys., 32, 1740 (1993).Google Scholar
[21] Abe, T., Oyobutsuri 59, 272 (1990).Google Scholar
[22] Ono, N., Harada, K. and Kida, M., Extended Abstract vol.1, 57th Fall Meeting, Japan Soc. Appl. Phys., 10a-ZH-11, p. 309 (1996).Google Scholar
[23] Okui, M., Hourai, M., Koike, T., Kajita, E., Kanda, T., Miki, S. and Shigemitsu, T., Oyodenshibussei bunkakai 4 (1995).Google Scholar
[24] Harada, H., Abe, T. and Chikawa, J., Proc. 5th Int. Symp. Silicon Materials Science and Technology, Boston, 1986, p. 76 (Electrochemical Society, Pennington, 1986).Google Scholar
[25] Wada, K., Takaoka, H., Inoue, N. and Kohra, K., Jpn. J. Appl.Phys. 18, 1629 (1979).Google Scholar
[26] Habu, R. and Tomiura, A., Jpn. J. Appl. Phys., 35, 1 (1996).Google Scholar
[27] Antoniadis, D. A. and Moskowitz, I., J. Appl. Phys., 53, 9214 (1982).Google Scholar
[28] Hu, S. M., J. Vac. Sci. Technol., 14, 17 (1977).Google Scholar