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Behavior of Deep Defects After Hydrogen Passivation in Znte Studied by Photoluminescence and Photoconductivity

Published online by Cambridge University Press:  10 February 2011

S. Bhunia  and
D.N. Bose
S. Bhunia
Affiliation:
Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, INDIA
D.N. Bose
Affiliation:
Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, INDIA
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Abstract

The effects of hydrogen passivation in undoped p-ZnTe single crystals were studied by photoluminescence (PL) and photoconductivity (PC) measurements. Samples were exposed to r.f hydrogen plasma at 250 °C for different durations. Before passivation PL peaks were observed at 2.06 eV, 1.47 eV, 1.33 eV and 1.06 eV. After 60 minutes exposure, samples showed strong band edge green luminescence at 2.37 eV due to an exciton bound to a Cu acceptor. Further exposure to plasma resulted in disappearance of 2.37eV and 2.34 eV peaks due to damage. In PC studies the dark current was found to decrease by a factor of 70 on 60 minutes passivation. From the temperature dependence of PC gain, the minority carrier lifetime τn, was found to go through a maximum of 4.5 × 10−7 sec at 220 K before passivation. After 60 minutes exposure, τn, remained constant at 4.5 × 10−7 sec for T > 220 K and decreased for T < 220 K. The activation energies of τn, were determined and show marked changes on passivation for T > 220 K. Comparison between PL and PC studies showed that the deep acceptor level OTe responsible for emission at 2.06 eV is passivated giving rise to strong band edge emission at 2.37 eV while emission due to the midgap impurity levels at 1.47, 1.33 and 1.05 eV remained unaffected. The thermal activation energies of the PL peaks have also been determined and allow the construction of a defect energy level diagram for ZnTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 331
Copyright
Copyright © Materials Research Society 1998

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References

1. Chevallier, J., Dautremont-Smith, W.C., Tu, C.W., and Pearton, S.J., Appl. Phys. Lett. 47, 108 (1985)Google Scholar
2. Pearton, S.J., Corbett, J.W., and Stavola, M., Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992)Google Scholar
3. Biglari, B., Samimi, M., Hage-Ali, M., and Siffert, P., Appl. Phys. A 43, 47 (1987)Google Scholar
4. Gurumurthy, Suma, Bhat, H.L., Sundersheshu, B., Bagai, R.K., and Kumar, Vikram, Appl. Phys. Lett. 68, 2424 (1996)Google Scholar
5. Bhunia, S. and Bose, D.N., J. Cryst. Growth (in press)Google Scholar
6. Hopfield, J., Thomas, D.G., and Lynch, R.T., Phys. Rev. Lett. 17, 312 (1966)Google Scholar
7. Halsted, R.E., Aven, M., and Coghill, H.D., J. Electrochem. Soc. 112, 177 (1965)Google Scholar
8. Lehman, W., J. Electrochem. Soc. 114, 83 (1967)Google Scholar
9. Dean, P.J., Venghaus, H., Pfister, J.C., Schaub, B., and Marine, J., J. Lum. 16, 363 (1978)Google Scholar
10. Biao, Y., Azoulay, M., George, M.A., Burger, -A., Collins, W.E., Silberman, E., Su, C.-H., Volz, M.E., Szofran, F.R., and Gillies, D.C., J. Cryst. Growth 138, 219 (1994)Google Scholar
11. Ogawa, H., Irfan, G.S., Nakayama, H., Nishio, M., and Yoshida, A., Jpn. J. Appl. Phys. 33, L980 (1994)Google Scholar