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Behavior of Damage in Selectively Implanted SiGe/Si

Published online by Cambridge University Press:  21 February 2011

N. David Theodore ,
Gordon Tam ,
Jim Whitfield ,
Jim Christiansen  and
John Steele
N. David Theodore
Affiliation:
Motorola Inc., Advanced Custom Technologies, Mesa, AZ 85202
Gordon Tam
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, 2200 W. Broadway Rd., M360 Mesa, AZ 85202
Jim Whitfield
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, 2200 W. Broadway Rd., M360 Mesa, AZ 85202
Jim Christiansen
Affiliation:
Motorola Inc., Advanced Custom Technologies, Mesa, AZ 85202
John Steele
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, 2200 W. Broadway Rd., M360 Mesa, AZ 85202
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Abstract

Epitaxial SiGe/Si layers are being extensively investigated for use in base regions of high-speed heterojunction bipolar-transistors (HBTs). Extended defects can be formed in SiGe/Si layers by ion-implantation. Defects, once formed in the layers, can negatively impact electrical performance and also future reliability of the HBTs. The present study investigates the interaction between selective-implant damage and strained SiGe/Si layers of sub-critical thickness. Implant-damage is observed to form dislocation-sources at the edges of implanted regions in SiGe/Si heterolayers. The dislocation sources produce glide dislocation loops. Segments of these loops glide down to SiGe/Si interfaces causing misfit dislocations to arise at interfaces in the heterolayers. Misfitdislocations are formed in directions parallel to and perpendicular to the <110> edge of the implanted region. Dislocations propagate out to a distance of ∼100-150 nm past the edge of the implant in the case of Si0.9Ge0.1/Si layers of sub-critical thickness. The origin and behavior of these defects is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 159
Copyright
Copyright © Materials Research Society 1994

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