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Beam-Assisted CVD of Microelectronic Films

Published online by Cambridge University Press:  21 February 2011

K. A. Emery ,
L. R. Thompson ,
D. Bishop ,
H. Zarnani ,
P. K. Boyer ,
C. A. Moore ,
J. J. Rocca  and
G. J. Collins
K. A. Emery
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
L. R. Thompson
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
D. Bishop
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
H. Zarnani
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
P. K. Boyer
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
C. A. Moore
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
J. J. Rocca
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
G. J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University Fort Collins, CO 80523
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Abstract

The properties of SiO2 and Si3 N4 films deposited by an ArF excimer laser, glow discharge electron beam and conventional plasma-enhanced CVD are compared. The deposition apparatus, technique, and conditions in addition to the physical, chemical and electrical properties of the films are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 81
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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