Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-19T04:44:46.261Z Has data issue: false hasContentIssue false
  • English
  • Français

Beam Processing in Silicon Device Technology

Published online by Cambridge University Press:  15 February 2011

C. Hill
C. Hill
Affiliation:
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Caswell, Towcester, Northants., England.
Get access

Abstract

Three modes of beam processing are distinguished, characterised by the heat pulse duration. The suitability of each of these modes as a process step in integrated circuit fabrication is discussed with reference to six criteria for applicability. Some conclusions are made as to the eventual application of each mode of processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 361
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hill, C., Daly, J.A., Godfrey, D.J., to be published.Google Scholar
2. Gold, R.B. and Gibbons, J.F., Laser and Electron Beam Processing of Materials, White, C.W. and Peercy, P.S. eds. Academic Press (1980).Google Scholar
3. Williams, J.S., Brown, W.L., Leamy, H.J., Poate, J.M., Rodgers, J.W., Rousseau, D., Rosgonyi, G.A., Shelmutt, J.A., Sheng, T.T., Appl. Phys. Letts 33 (1978) 542–545.Google Scholar
4. Mizuta, M., Sheng, N.H., Merz, J.L., Leitoila, A., Gold, R.B., Gibbons, J.F., Appl. Phys. Letts. 37 (2) July (1980) 154–156.Google Scholar
5. Moore Coherent, J. (1980), private communication.Google Scholar
6. McMahon, R.A., Ahmed, H., Electronics Letters 15 No.2 (1979) 45–47.Google Scholar
7. Plows, G., Lintech Co., private communication (1980).Google Scholar
8. Hill, C., Laser-Solid Interactions, A.I.P. Conf.Proc.No.50 (1979) 425–428.Google Scholar
9. Hill, C., as ref.16, 26–43.Google Scholar
10. Miyao, M., Koyanagi, M., Tamura, H., Hashimoto, N., Kokuyama, T., Jap.J.Appl. Phys. 19 (1980) Supp 19–1, 129–132.CrossRefGoogle Scholar
11. Kimerling, L.C. and Benton, J.L., Laser and Electron Beam Processing of Materials, White, C.W. and Peercy, P.S. eds. Academic Press (1980) 385–396.CrossRefGoogle Scholar
12. Johnson, N.M., Bartelink, D.J., Noyes, M.D., Gibbons, J.F., Lietoila, A., Ratnakumer, K.N., Regolini, J.L., ibid 423–434 andGoogle Scholar
Street, R.A., Johnson, N.M., Lietoila, A., ibid 435–440.Google Scholar
13. Benton, J.L., Doherty, C.J., Ferris, S.D., Kimerling, L.C., Leamy, H.J., Celler, G.K., ibid 430–434.Google Scholar
14. Lindner, M., Phys.Stat.Sol.(a) 57 (1980) 263–267.Google Scholar
15. Zimmer, G., Electronics Letters 15 No.6 (1979) 184–186.CrossRefGoogle Scholar
16. McMahon, R.A., Ahmed, H., Speight, J.D., Dobson, R.M., Laser and Electron Beam Processing of Electronic Materials. Anderson, C., Celler, G.K., Rosgonyi, G.A. eds. Electrochem.Soc.Proc.Vol.80–1 (1980) 130–137.Google Scholar
17. Speight, J.D., Dobson, R.M., McMahon, R.A., Ahmed, H., this volume.Google Scholar
18. Cullis, A.G., Weber, H. (1980), private communication.Google Scholar
19. Kaplan, R.A., Cohen, M.G., Liu, K.C., as ref.16, 58–82.Google Scholar
20. Hill, C., to be published.Google Scholar