Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:42:49.328Z Has data issue: false hasContentIssue false
  • English
  • Français

Beam Induced Reactions in Metal-Film Systems

Published online by Cambridge University Press:  15 February 2011

S. S. Lau ,
Martti Mäenpää  and
James W. Mayer
S. S. Lau
Affiliation:
Dept. of Electrical Engineering and Computer Science, UCSD, La Jolla, Ca., 92093
Martti Mäenpää
Affiliation:
Electrical Engineering Dept., Caltech, Pasadena, Ca. 91125
James W. Mayer
Affiliation:
Dept. of Materials Science, Bard Hall, Cornell, Ithaca, N.Y., 14853
Get access

Abstract

Pulsed beams (laser, electron, or ion) and ion beams (ion beam mixing) have been used to induce structural and compositional changes in metal-metal and metal-semiconductor thin-film structures. Metastable crystalline and amorphous phases have been formed. Although ultra fast quenching occurs with both techniques, metastable phases are formed by quenching from the liquid with pulsed beams and from the solid-phase with ion-induced reactions. With both techniques metastable phases can be formed over a broader compositional range than with conventional melt-quench methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 547
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Laser-Solid Interactions and Laser Processing–1978, Ferris, S. D., Leamy, H. J., and Poate, J. M., eds. AIP Conference Proceedings, Number 50. (American Institute of Physics, New York 1979.)Google Scholar
2. Ion Implantation, Hirvonen, J. K., ed. Treatise on Materials Science and Technology, Vol. 18. (Academic Press, New York 1980).Google Scholar
3. Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S., eds. (Academic Press, New York 1980).Google Scholar
4. Ion Implantation Metallurgy, Preece, C. M. and Hirvonen, J. K., eds. (The Metallurgical Society of AIMF, New York 1980).Google Scholar
5. Ion Beam Modification of Materials, Brown, W. L. and Gibson, W. N., eds. Conference Proceedings, Albany, July published in Nuclear Instruments and Methods, 1981.Google Scholar
6. Duwez, P., Ann. Rev. Mat. Sci. 6, 83 (1976).CrossRefGoogle Scholar
7. Marcus, M. and Turnbull, D., Mat. Sci. Eng. 23, 211 (1976).CrossRefGoogle Scholar
8. Von Allmen, M., Lau, S. S., Mäenpää, M., and Tsaur, B. Y., Appl. Phys. Lett. 36, 205 (1980).CrossRefGoogle Scholar
9. Von Allmen, M., Lau, S. S., Mäenpää, M., and Tsaur, B. Y., Appl. Phys. Lett. 37, 84 (1980).Google Scholar
10. Buene, L., Poate, J. M., Jacobson, D. C., Draper, C. W., and Hirvonen, J. K., Appl. Phys. Lett. 37, 385 (1980).CrossRefGoogle Scholar
11. Rimini, E. and Baglin, J. E. E., Appl. Phys. Lett. 37, 481 (1980).Google Scholar
12. Hirvonen, J. K., Poate, J. M., Greenwald, A., and Little, R., Appl. Phys. Lett. 36, 564 (1980).Google Scholar
13. Hussain, T., Geerk, J., Ratzel, F., and Linker, G., Appl. Phys. Lett. 37, 298 (1980).Google Scholar
14. Hodgson, R. T., Baglin, J. E. E., Pal, R., Neri, J. M. and Hammer, D. A., Appl. Phys. Lett. 37, 187 (1980).Google Scholar
15. Cullis, A. G., Borders, J. A., Hirvonen, J. K. and Poate, J. M., Phil. Mag. 37, 615 (1978).Google Scholar
16. Poate, J. M., J. Vac. Sci. and Techn. 15, 1636 (1978).Google Scholar
17. Poate, J. M. and Cullis, A. G., Ref. 2, p. 85.Google Scholar
18. Grant, W. A., J. Vac. Sci. and Techn. 15, 1644 (1978).Google Scholar
19. Liau, Z. L. and Mayer, J. W., Ref. 2, p. 17.Google Scholar
20. Tsaur, B. Y., Liau, Z. L., and Mayer, J. W., Appl. Phys. Lett. 34, 168 (1979).Google Scholar
21. Mayer, J. W., Lau, S. S., Tsaur, B. Y., Poate, J. M., and Hirvonen, J. K., Ref. 4, p. 37.Google Scholar
22. Littmark, U. and Hofer, W. O., Nucl. Instr. and Meth. 168, 329 (1980).Google Scholar
23. Mayer, J. W., Tsaur, B. Y., Lau, S. S., and Hung, L. S., Ref. 5.Google Scholar
24. Tsaur, B. Y., Lau, S. S., Hung, L. S., and Mayer, J. W., Ref. 5.Google Scholar
25. Lau, S. S., Tsaur, B. Y., Von Allmen, M., Mayer, J. W., Stritzker, B., White, C. W., and Appleton, B., Ref. 5.Google Scholar
26. Poate, J. M., Leamy, H. J., Sheng, T. T. and Cellar, G. K., Appl. Phys. Lett. 33, 918 (1978).Google Scholar
27. Wittmer, M. and Von Allmen, M., J. Appl. Phys. 50, 4786 (1979).Google Scholar
28. Cullis, A. G., Webber, H. C., Poate, J. M., and Simons, A. L., Appl. Phys. Lett. 36, 320 (1980).CrossRefGoogle Scholar
29. Tsaur, B. Y., Lau, S. S., Liau, Z. L., and Mayer, J. W., Thin Solid Films 63, 31 (1979).Google Scholar
30. Tsaur, B. Y., Mayer, J. W., and Tu, K. N., J. Appl. Phys. 51, 5327 (1980).Google Scholar
31. Tsaur, B. Y., Mayer, J. W., Graczyk, J. F. and Tu, K. N., J. Appl. Phys. 51, 5334 (1980).Google Scholar
32. Majni, G., Nava, F., Ottaviani, G., Danna, E., Leggieri, G., Luches, A., and Celotti, G., J. Appl. Phys. (submitted).Google Scholar
33. Marchal, G., Ph. Mangin and Chr. Janot, Phil. Mag. 42B, 81 (1980).Google Scholar
34. Tsaur, B. Y., Mayer, J. W., Nicolet, M.-A., and Tu, K. N., Ref. 4, p. 142.Google Scholar
35. Ishiwara, H. and Kuzuta, N., Appl. Phys. Lett. 37, 641 (1980).Google Scholar
36. Csepregi, L., Kennedy, E. F., Mayer, J. W. and Sigmon, J. W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
37. Lau, S. S., Matteson, S., Mayer, J. W., Revesz, P., Gyulai, J., Roth, J., Sigmon, T. W., and Cass, T., Appl. Phys. Lett. 34, 76 (1979).Google Scholar
38. Mäenpää, M. and Lau, S. S., unpublished data (1980).Google Scholar
39. Poate, J. M., Borders, J. A., Cullis, A. G. and Hirvonen, J. K., Appl. Phys. Lett. 30, 365 (1977).Google Scholar
40. Tsaur, B. Y., Lau, S. S., and Mayer, J. W., Appl. Phys. Lett. 36, 823 (1980).Google Scholar