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Beam Assisted Atomic Layer Controlled Epitaxy and Etching of GaAs

Published online by Cambridge University Press:  16 February 2011

T. Meguro  and
Y. Aoyagi
T. Meguro
Affiliation:
RIKEN (The Institute of Physical and Chemical Research), Hirosawa, Wako, Saltama 351-01, Japan
Y. Aoyagi
Affiliation:
RIKEN (The Institute of Physical and Chemical Research), Hirosawa, Wako, Saltama 351-01, Japan
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Abstract

Atomic layer epitaxy (ALE) using laser irradiation and digital etching of GaAs are described herein.

Epitaxy: We have succeeded in the laser-assisted ALE (laser-ALE) of GaAs using visible wavelength Art laser irradiation and an alkylgallium source. Visible wavelength photon irradiation induces surface decomposition but not volume decomposition of alkylmetal molecule source gases. ALE is realized by the enhancement of decomposition of alkylgallium molecules only on the As-terminated surface but not on the Ga-terminated surface. This site-selectivity of alkylgallium decomposition is induced by the optical absorption band broadening, which is due to the chemisorption of alkylgallium at the As-terminated surface.

Etching: In ditigal etching, etchant gas pulses and an energetic beam sequentially impinge onto the substrate surface. In the Ar+/Cl2 system, the etch rate is found to be independent of both Cl2flux and Ar+ beam density, and the etch rate saturates at a level below one monolayer per cycle. By using Cl radicals as etchants instead of Cl2, the self-limited etching characteristics of digital etching are obtained within both the Ar+ incidence time and Cl feed time of the etching cycle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 121
Copyright
Copyright © Materials Research Society 1991

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