Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T04:22:55.468Z Has data issue: false hasContentIssue false

Basic Thin Film Process for Perovskite Ferroelectric Materials

Published online by Cambridge University Press:  16 February 2011

Hideaki Adachi
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.Moriguchi, Osaka 570, Japan
Kiyotaka Wasa
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.Moriguchi, Osaka 570, Japan
Get access

Abstract

Thin film process for ferroelectric perovskite oxides has been investigated. Amorphous, polycrystal, and epitaxial thin films of Pb-based perovskite ferroelectrics were prepared by rf-magnetron sputtering, and their properties were discussed. Epitaxial PLZT thin films showed similar dielectric properties as PLZT bulk ceramics and also showed strong electrooptic effect. For further investigation, film preparation process was developed by multitarget sputtering and quaternary PLZT thin film with excellent epitaxial crystallinity was realized by using a graded composition layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Feldman, C., Rev. Sci. Instrum. 26, 463 (1955).Google Scholar
[2] Feuersanger, A. E., Hangenlocher, A. K., and Solomon, A. L., J. Electrochem. Soc. 111, 1387 (1964).Google Scholar
[3] Tanaka, K., Higuma, Y., Yokoyama, K., Nakagawa, T., and Hamakawa, Y., Jpn. J. Appl. Phys. 15, 1381 (1976).Google Scholar
[4] Fukami, T. and Sakuma, T., Jpn. J. Appl. Phys. 20, 1599 (1981).Google Scholar
[5] Castellano, R. N. and Feinstein, L. G., J. Appl. Phys. 50, 4406 (1979).Google Scholar
[6] Davis, G. M. and Gower, M. C., Appl. Phys. Lett. 55, 112 (1989).Google Scholar
[7] Nakagawa, T., Yamaguchi, J., Okuyama, M., and Hamakawa, Y., Jpn. J. Appl. Phys. 21, L655 (1982).Google Scholar
[8] Shintani, Y. and Tada, O., J. Appl. Phys. 41, 2376 (1970).Google Scholar
[9] Ishida, M., Matsunami, H., and Tanaka, T., Appl. Phys. Lett. 31, 433 (1977).Google Scholar
[10] Dharmadhikari, V. S. and Grannemann, W. W., J. Appl. Phys. 53, 8988 (1982).Google Scholar
[11] Krupanidhi, S. B., Maffei, N., Sayer, M., and El-Assal, K., J. Appl. Phys. 54, 6601 (1983).Google Scholar
[12] Iijima, K., Tomita, Y., Takayama, R., and Ueda, I., J. Appl. Phys. 60, 361 (1986).Google Scholar
[13] Kushida, K. and Takeuchi, H., Appl. Phys. Lett. 50, 1800 (1987).Google Scholar
[14] Okada, A., J. Appl. Phys. 48, 2905 (1977).Google Scholar
[15] Wasa, K., Adachi, H., Hirochi, K., Setsune, K., Kamada, T., and Kitabatake, M., Thin Solid Films 163, 175 (1988).Google Scholar
[16] Kushida, K. and Takeuchi, H., Jpn. J. Appl. Phys. Suppl. 24–2, 407 (1985).Google Scholar
[17] Haertling, G. H. and Land, C. E., J. Am. Ceram. Soc. 54, 1 (1971).Google Scholar
[18] Kitabatake, M. and Wasa, K., Jpn. J. Appl. Phys. Suppl. 24–3, 33 (1985).Google Scholar
[19] Ishida, M., Tsuji, S., Kimura, K., Matsunami, H., and Tanaka, T., J. Cryst. Growth 45, 393 (1978).Google Scholar
[20] Okuyama, M., Usuki, T., Hamakawa, Y., and Nakagawa, T., Appl. Phys. 21, 339 (1980).Google Scholar
[21] Takayama, R. and Tomita, Y., J. Appl. Phys. 65, 1666 (1989).Google Scholar
[22] Adachi, H., Mitsuyu, T., Yamazaki, O., and Wasa, K., J. Appl. Phys. 60, 736 (1986).Google Scholar
[23] Farnell, G. W., Cermak, I. A., Silvester, P., and Wong, S. K., IEEE Trans. Sonics Ultrason. SU–17. 188 (1970).Google Scholar
[24] Adachi, H., Kawaguchi, T., Kitabatake, M., and Wasa, K., Jpn. J. Appl. Phys. Suppl. 22–2, 11 (1983).Google Scholar
[25] Keizer, K. and J.Burggraaf, A., Ferroelectrics 14, 671 (1976).Google Scholar
[26] Adachi, H., Kawaguchi, T., Setsune, K., Ohji, K., and Wasa, K., Appl. Phys. Lett. 42, 867 (1983).Google Scholar
[27] Adachi, H., Mitsuyu, T., Yamazaki, O., and Wasa, K., Jpn. J. Appl. Phys. Suppl. 24–3, 13 (1985).Google Scholar