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A Barrier to Trap Filling in CuIn1-xGaxSe2
Published online by Cambridge University Press: 01 February 2011
Abstract
Voltage pulses of variable length were applied to CuIn1-xGaxSe2/CdS (0 < x < 1) junction solar cells. The resulting transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead they follow a simple electrostatic model based on electrostatic charging of traps.
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- Copyright © Materials Research Society 2003
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