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Barrier to Migration of the Intrinsic Defects in Silicon in Different Charged System Using First-principles Calculations
Published online by Cambridge University Press: 01 February 2011
Abstract
Using density functional theory (DFT) calculations within the generalized gradient approximation (GGA), we have investigated the structure, energies and diffusion behavior of Si defects including interstitial, vacancy, FFCD and divacancy in various charged states.
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- Research Article
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- Copyright © Materials Research Society 2005
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