Article contents
Barrier Properties of Tasi2 in Contact With Al-Metallization
Published online by Cambridge University Press: 22 February 2011
Abstract
The reaction between cosputtered amorphous and polycrystalline tantalum silicide with Al-Si-metallization was investigated by means of Schottky and ohmic contacts on Si. Diffusson of Al and Si across the silicide was impeded up to 475 °C, as long as the silicide films contained excess Ta with respect to the TaSi2 stoichiometry. The results show that Al-Si with a thin Ta-rich tantalum silicide underlayer provides a VLSI-metallization with considerably reduced contact resistance, particularly for small contacts, and low Schottky barrier to n-Si without significant Si consumption from the substrate
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1984
References
REFERENCES
- 3
- Cited by