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Barrier Integrity Effect on Leakage Mechanism and Dielectric Reliability of Copper/OSG Interconnects

Published online by Cambridge University Press:  01 February 2011

Yunlong Li ,
Zsolt Tökei ,
Tushar Mandrekar ,
Bencherki Mebarki ,
Guido Groeseneken  and
Karen Maex
Yunlong Li
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium Department of Electrical Engineering, Katholieke Universiteit Leuven, 3001 Leuven, Belgium
Zsolt Tökei
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Tushar Mandrekar
Affiliation:
Copper PVD Integration Systems and Modules, Applied Materials, CA 95054, USA
Bencherki Mebarki
Affiliation:
Maydan Technology Center Group, Applied Materials, Santa Clara, CA, USA
Guido Groeseneken
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium Department of Electrical Engineering, Katholieke Universiteit Leuven, 3001 Leuven, Belgium
Karen Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium Department of Electrical Engineering, Katholieke Universiteit Leuven, 3001 Leuven, Belgium
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Abstract

In this paper, we investigate the effect of copper diffusion barrier integrity on the leakage behavior and dielectric reliability of copper/micro porous organo-silica-glass (OSG) interconnects. Significant differences in the field dependence of TDDB median-time-to-failure are observed when comparing sub-critical and sealing barriers. Also for the temperature acceleration of TDDB, a significant difference is found which is reflected in the thermal activation energies. With fast voltage ramp measurements, I-V curves of samples with subcritical and sealing barriers are compared before and after constant current stresses. Above 1.4 MV/cm, the dominant leakage mechanism is found to be Frenkel-Poole emission regardless of barrier treatments and stress times. Below 1.4 MV/cm, however, the I-V characteristic is modulated by the barrier integrity, which can be attributed to copper diffusion into the intermetal dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B4.4
Copyright
Copyright © Materials Research Society 2005

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